{"id":12000,"date":"2024-08-23T10:49:38","date_gmt":"2024-08-23T08:49:38","guid":{"rendered":"https:\/\/www.ims-chips.de\/?p=12000"},"modified":"2024-08-26T14:53:01","modified_gmt":"2024-08-26T12:53:01","slug":"patentierte-ims-nanohole-technologie-im-all2gan-projekt","status":"publish","type":"post","link":"https:\/\/www.ims-chips.de\/?p=12000","title":{"rendered":"Patentierte IMS Nanohole-Technologie im ALL2GaN-Projekt"},"content":{"rendered":"\t\t<div data-elementor-type=\"wp-post\" data-elementor-id=\"12000\" class=\"elementor elementor-12000\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-92fae49 elementor-section-boxed elementor-section-height-default elementor-section-height-default exad-glass-effect-no exad-sticky-section-no\" data-id=\"92fae49\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-56197b6 exad-glass-effect-no exad-sticky-section-no\" data-id=\"56197b6\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-fde97e0 exad-sticky-section-no exad-glass-effect-no elementor-widget elementor-widget-heading\" data-id=\"fde97e0\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Patentierte IMS Nanohole-Technologie im ALL2GaN-Projekt<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-78216c7 elementor-section-boxed elementor-section-height-default elementor-section-height-default exad-glass-effect-no exad-sticky-section-no\" data-id=\"78216c7\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-f54e03c exad-glass-effect-no exad-sticky-section-no\" data-id=\"f54e03c\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-4cb5aa6 exad-sticky-section-no exad-glass-effect-no elementor-widget elementor-widget-text-editor\" data-id=\"4cb5aa6\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p><strong>Threshold-Voltage-Engineered GaN-HEMTs f\u00fcr integrierte Hochfrequenz-, Leistungs- und MEMS-Schaltungen<\/strong><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-e11edc0 elementor-section-boxed elementor-section-height-default elementor-section-height-default exad-glass-effect-no exad-sticky-section-no\" data-id=\"e11edc0\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-e0ce6d9 exad-glass-effect-no exad-sticky-section-no\" data-id=\"e0ce6d9\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-2cc292b exad-sticky-section-no exad-glass-effect-no elementor-widget elementor-widget-image\" data-id=\"2cc292b\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"image.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<img fetchpriority=\"high\" decoding=\"async\" width=\"750\" height=\"691\" src=\"https:\/\/www.ims-chips.de\/wp-content\/uploads\/2024\/08\/ALL2GaN_Nanohole_TEST01.png\" class=\"attachment-large size-large wp-image-12003\" alt=\"Patentierte IMS Nanohole-Technologie im ALL2GaN-Projekt\" srcset=\"https:\/\/www.ims-chips.de\/wp-content\/uploads\/2024\/08\/ALL2GaN_Nanohole_TEST01.png 789w, https:\/\/www.ims-chips.de\/wp-content\/uploads\/2024\/08\/ALL2GaN_Nanohole_TEST01-300x276.png 300w, https:\/\/www.ims-chips.de\/wp-content\/uploads\/2024\/08\/ALL2GaN_Nanohole_TEST01-768x708.png 768w\" sizes=\"(max-width: 750px) 100vw, 750px\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-d41767e exad-glass-effect-no exad-sticky-section-no\" data-id=\"d41767e\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap\">\n\t\t\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-5f06836 elementor-section-boxed elementor-section-height-default elementor-section-height-default exad-glass-effect-no exad-sticky-section-no\" data-id=\"5f06836\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-ee1a0f1 exad-glass-effect-no exad-sticky-section-no\" data-id=\"ee1a0f1\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-fbc04f3 exad-sticky-section-no exad-glass-effect-no elementor-widget elementor-widget-text-editor\" data-id=\"fbc04f3\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>Vergangenen Jahres startete das europ\u00e4ische ALL2GaN-Projekt als Antwort auf den European Chip Act, sowie den Herausforderungen des Klimawandels. Ziel ist es, europ\u00e4ische Akteure im Bereich der Leistungs- und Hochfrequenzelektronik zusammenzubringen um ein gemeinsames \u00d6kosystem zu schaffen, in dem energieeffiziente GaN-ICs auf industrieller Ebene gefertigt werden k\u00f6nnen.<\/p>\n<p>  Unter den 45 Partners aus ganz Europa ist auch das IMS, welches sich im Projektrahmen mit der Weiterentwicklung der patentierten Nanohole-Technologie auf GaN-auf-Si-Wafern befassen wird. Diese Technologie ist eine Methode zur Strukturierung der Gate-Bereiche in GaN-HEMTs mittels derer gezielt die Einschaltspannung der Transistoren ver\u00e4ndert werden kann. So wird die gleichzeitige Herstellung von GaN-Transistoren mit gezielt eingestellter Einschaltspannung innerhalb desselben ICs erm\u00f6glicht. <\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-c0a5c70 exad-glass-effect-no exad-sticky-section-no\" data-id=\"c0a5c70\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-5059866 exad-sticky-section-no exad-glass-effect-no elementor-widget elementor-widget-text-editor\" data-id=\"5059866\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>  Auf einem einzigen Wafer sollen so Transistoren f\u00fcr unterschiedlichste Anwendungen in derselben Technologie hergestellt werden, die sowohl Hochfrequenz-, Leistungs-, aber auch MEMS-Bauteile erm\u00f6glicht. <\/p>\n<p>  Nach der erfolgreichen Demonstration der Technologie stellt die Arbeit innerhalb des ALL2GaN-Projektes den n\u00e4chsten Entwicklungsschritt in Richtung Threshold-Voltage-Engineered HEMT-ICs dar. <\/p>\n<p>  In Kooperation mit SweGaN (Link\u00f6ping, Schweden) wird zudem das Portfolio des IMS GaN-Prozesses auf die Bearbeitung von GaN-auf-SiC-Wafern erweitert, die mittels QuanFINE-Technologie hergestellt werden. Die in diesem Arbeitspaket hergestellten Schaltungen dienen prim\u00e4r der Prozessentwicklung und Materialcharakterisierung auf diesem neuartigen Materialsystem und erg\u00e4nzen die bereits bestehende Bauteilherstellung auf GaN-auf-Si-Wafern.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-7fe4f27 elementor-section-boxed elementor-section-height-default elementor-section-height-default exad-glass-effect-no exad-sticky-section-no\" data-id=\"7fe4f27\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-18576ea exad-glass-effect-no exad-sticky-section-no\" data-id=\"18576ea\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-b76b843 exad-sticky-section-no exad-glass-effect-no elementor-widget elementor-widget-text-editor\" data-id=\"b76b843\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>Infos: Matthias Moser \u2022 Telefon +49 711 21855-479 \u2022 moser@ims-chips.de<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"<p>Die vom IMS patentierte GaN Nanohole-Technologie zur Herstellung normal-ausgeschalteter GaN High Electron Mobility Transistoren (HEMTs) mit positiver Einschaltspannung wird im ALL2GaN-Projekt weiterentwickelt. Dazu werden anhand von Anwendungsdemonstratoren monolithisch integrierte Schaltungen hergestellt, die auf einem Wafer die gleichzeitige Herstellung von Leistungs-, Hochfrequenz- und MEMS-Bauteilen in einer gemeinsamen GaN-Technologie erm\u00f6glichen.<\/p>\n","protected":false},"author":1,"featured_media":12007,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[35],"tags":[],"class_list":["post-12000","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-newsletter_2024"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.6 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Patentierte IMS Nanohole-Technologie im ALL2GaN-Projekt - Institut f\u00fcr Mikroelektronik Stuttgart<\/title>\n<meta name=\"description\" content=\"Weiterentwicklung patentierter GaN-Nanohole-Technologie im ALL2GaN-Projekt\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ims-chips.de\/?p=12000\" \/>\n<meta property=\"og:locale\" content=\"de_DE\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Patentierte IMS Nanohole-Technologie im ALL2GaN-Projekt - 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