Fields of activity
 

Photomasks

  • Patterning of 6“ and 9“ substrates with sophisticated pattern on a variety of layer stacks, e.g.
  • - Cr
    - MoSi
    - SiO2
    - SiO2/Ta
    - TaN
  • For binary optical and EUV, attenuated and alternating PSM, even with special thicknesses and layer combinations
  • Pictures: Cr-Profile, EUV-Maske, OMOG-Strukturierung, MoSi-Profile
  • (no repair, no defect detection, no pellicle)

EUV mask

100 nm pattern in a TaN absorber

Contact
For further information, please contact: Holger Sailer