Photomasks

• Patterning of 6“ and 9“ substrates with sophisticated pattern on a variety of layer stacks, e.g.
- Cr
- MoSi
- SiO2
- SiO2/Ta
- TaN

• For binary optical and EUV, attenuated and alternating PSM, even with special thicknesses and layer combinations
• Pictures: Cr-Profile, EUV-Maske, OMOG-Strukturierung, MoSi-Profile
• (no repair, no defect detection, no pellicle)

EUV mask

100 nm pattern in a TaN absorber

Contact

For further information, please contact: Holger Sailer